SK Hynix H9HQ53AECMMDAR-KEM 76L 3D-V4 NAND Memory Floorplan Analysis

公关oduct Code
MFR-1907-801
Release Date
12/09/2019
Availability
Published
公关oduct Item Code
HYN-H25EMB0
Device Manufacturer
Hynix
Device Type
Vertical NAND Flash
Subscription
Memory - NAND & DRAM
Channel
Memory - NAND Floorplan Analysis
Report Code
MFR-1907-801
This report presents a Memory Floorplan Analysis of the SK Hynix H25EMB0 found inside the SK Hynix H9HQ53AECMMDAR-KEM. The H9HQ53AECMMDAR-KEM was extracted from the Xiaomi Redmi K20 M1903F10A smartphone.

This report contains the following detailed information:
  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
  • Plan-view SEM micrograph of the die delayered to the WL and BL layers
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to the polysilicon layer
  • Identification of major functional blocks on a polysilicon die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and polysilicon die photographs delivered in CircuitVision
  • Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process

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